The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Apr. 20, 2006
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Amol Joshi, Sunnyvale, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Chi Chang, Saratoga, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Amol Joshi, Sunnyvale, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Chi Chang, Saratoga, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A dual node memory device and methods for fabricating the device are provided. In one embodiment the method comprises forming a layered structure with an insulator layer, a charge storage layer, a buffer layer, and a sacrificial layer on a semiconductor substrate. The layers are patterned to form two spaced apart stacks and an exposed substrate portion between the stacks. A gate insulator and a gate electrode are formed on the exposed substrate, and the sacrificial layer and buffer layer are removed. An additional insulator layer is deposited overlying the charge storage layer to form insulator-storage layer-insulator memory storage areas on each side of the gate electrode. Sidewall spacers are formed at the sidewalls of the gate electrode overlying the storage areas. Bit lines are formed in the substrate spaced apart from the gate electrode, and a word line is formed that contacts the gate electrode and the sidewall spacers.