IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Kyu-Charn Park

USPTO Granted Patents = 33

Average Co-Inventor Count = 3.4

ph-index = 9

Forward Citations = 473(Granted Patents)


Location History:

  • Kyonggi-do, KR (2001)
  • Pyoungtaek, KR (2002)
  • Pyeongtaek, KR (2003)
  • Pyeongtaek-shi, KR (2004)
  • Pyoungtaek-shi, KR (2004 - 2005)
  • Kyungki-do, KR (2003 - 2008)
  • Kyunggi-do, KR (2003 - 2008)
  • Byeongtaek-si, KR (2011)
  • Pyengtaek-si, KR (2011)
  • Gyeonggi-do, KR (2007 - 2012)
  • Pyeongtaek-si, KR (2009 - 2014)

Company Filing History:

goldMedal33 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2014

Loading Chart...
33 patents (USPTO):
1. 8809932 - Semiconductor memory device, method of fabricating the same, and devices employing the semiconductor memory device (2014-08-19),
2. 8120091 - Non-volatile memory devices including a floating gate and methods of manufacturing the same (2012-02-21),
3. 8076713 - Non-volatile memory devices having a multi-layered charge storage layer (2011-12-13),
4. 8049269 - Non-volatile memory device and method of manufacturing the same (2011-11-01),
5. 7915138 - Methods of manufacturing non-volatile memory devices (2011-03-29),
6. 7883929 - Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers (2011-02-08),
7. 7868467 - Semiconductor device (2011-01-11),
8. 7679960 - Non-volatile memory device and method of operating the same (2010-03-16),
9. 7649784 - Memory cell programming methods capable of reducing coupling effects (2010-01-19),
10. 7615437 - Non-volatile memory device and method of manufacturing the same (2009-11-10),
11. 7602633 - Non-volatile memory device, method of manufacturing the same, and method of operating the same (2009-10-13),
12. 7577042 - Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device (2009-08-18),
13. 7534684 - Methods of forming non-volatile memory devices having a multi-layered charge storage layer (2009-05-19),
14. 7508048 - Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby (2009-03-24),
15. 7449763 - Method of fabricating cell of nonvolatile memory device with floating gate (2008-11-11),

Title: Kyu-Charn Park: Pioneering Inventor from Gyeonggi-do, South Korea

Introduction: Kyu-Charn Park is a distinguished inventor hailing from the vibrant region of Gyeonggi-do, South Korea. With a passion for innovation and a keen eye for technological advancements, Park has made significant contributions to the field of patents and inventions.

Latest Patents: Park's latest patents showcase his expertise in areas such as electronics, telecommunications, and sustainable energy solutions. His innovative approach to problem-solving is evident in the cutting-edge technologies he has developed.

Career Highlights: Throughout his illustrious career, Kyu-Charn Park has been recognized for his groundbreaking inventions that have revolutionized various industries. His commitment to pushing the boundaries of what is possible has earned him a reputation as a visionary in the world of patents.

Collaborations: Park has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Kyu-Charn Park's relentless pursuit of innovation and his dedication to creating a better future through his inventions make him a true trailblazer in the world of patents. His impact on the industry is sure to be felt for years to come.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…