The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2011

Filed:

Jul. 03, 2008
Applicants:

Choong-ho Lee, Seongnam-si, KR;

Hee-soo Kang, Yongin-si, KR;

Kyu-charn Park, Pyengtaek-si, KR;

Inventors:

Choong-Ho Lee, Seongnam-si, KR;

Hee-Soo Kang, Yongin-si, KR;

Kyu-Charn Park, Pyengtaek-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a first substrate, a plurality of cell transistors and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The plurality of cell transistors is formed extending on the first surface of the first substrate in a direction. The second substrate has an upper surface making contact with the second surface of the first substrate. Further, the upper surface of the second substrate has a bent structure to apply tensile stresses to the first substrate in the extending direction of the plurality of cell transistors. Thus, tensile stresses may be applied to the first substrate to improve the mobility of carriers in a channel region of the cell transistors.


Find Patent Forward Citations

Loading…