The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 13, 2007
Kyoung-iae Cho, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Sung-jae Byun, Yongin-si, KR;
Kyu-charn Park, Pyeongtaek-si, KR;
Yoon-dong Park, Yongin-si, KR;
Choong-ho Lee, Seongnam-si, KR;
Kyoung-Iae Cho, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Sung-jae Byun, Yongin-si, KR;
Kyu-charn Park, Pyeongtaek-si, KR;
Yoon-dong Park, Yongin-si, KR;
Choong-ho Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a memory cell programming method, first through n-th programming operations are performed to program first through n-th bits of the n bits of data using the plurality of threshold voltage distributions. The first through n-th programming operations are performed sequentially. A threshold voltage difference between threshold voltage distributions used in the n-th programming operation is less than or equal to at least one threshold voltage difference between threshold voltage distributions used in the first through (n−1)-th programming operations.