Tokyo, Japan

Kuniaki Yagi

This inventor holds 14 USPTO granted patents and 3 published patent applications, primarily in Silicon Carbide Technology. Top assignees: Hoya Corporation, Sicoxs Corporation, Kabushiki Kaisha Toyota Jidoshokki. Active years: 2002-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuniaki Yagi. Retrieved from https://idiyas.com/inventor/kuniaki-yagi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 35.7

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 86(Granted Patents)


Location History:

  • Oume, JP (2004)
  • Ome, JP (2004 - 2014)
  • Tokyo, JP (2002 - 2022)

Company Filing History:


Years Active: 2002-2022

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Areas of Expertise:
Semiconductor Substrate
Silicon Carbide
Polycrystalline SiC
Single Crystal
Composite Material
Manufacturing Method
Semiconductor Device
Silicon Carbide Film
Process Production
Compound Crystal
14 patents (USPTO):Explore Patents

Title: Kuniaki Yagi: Innovator in Semiconductor Technology

Introduction

Kuniaki Yagi is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Yagi has made remarkable advancements in the field, particularly in the development of semiconductor substrates.

Latest Patents

Among his latest patents are innovations related to semiconductor substrates and elements. One notable patent describes a semiconductor substrate that includes a single crystal GaO-based substrate bonded to a polycrystalline substrate. This design features a single crystal GaO-based substrate that is thinner than the polycrystalline substrate, which possesses a higher fracture toughness value. Another important patent focuses on a polycrystalline SiC substrate and its manufacturing method. This patent specifies that the substrate grain size change rate of the polycrystalline SiC substrate is 0.43% or less, with a radius of curvature of 142 m or more.

Career Highlights

Kuniaki Yagi has worked with several notable companies throughout his career, including Hoya Corporation and Sicoxs Corporation. His work in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Yagi has collaborated with esteemed colleagues such as Takamitsu Kawahara and Hiroyuki Nagasawa. These partnerships have further enhanced his research and development efforts in the semiconductor industry.

Conclusion

Kuniaki Yagi's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in this field. His innovative work continues to influence advancements in semiconductor substrates and elements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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