The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Dec. 03, 2001
Applicant:
Inventors:
Yukitaka Nakano, Tokyo, JP;
Hiroyuki Nagasawa, Tokyo, JP;
Kuniaki Yagi, Tokyo, JP;
Takamitsu Kawahara, Tokyo, JP;
Assignee:
Hoya Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
C01B 3/326 ;
U.S. Cl.
CPC ...
C01B 3/326 ;
Abstract
There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.