The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Nov. 15, 2011
Applicants:
Hiroyuki Nagasawa, Inagi, JP;
Takamitsu Kawahara, Kawasaki, JP;
Kuniaki Yagi, Ome, JP;
Naoki Hatta, Hachioji, JP;
Inventors:
Hiroyuki Nagasawa, Inagi, JP;
Takamitsu Kawahara, Kawasaki, JP;
Kuniaki Yagi, Ome, JP;
Naoki Hatta, Hachioji, JP;
Assignee:
Hoya Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01); C30B 29/36 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/02381 (2013.01); H01L 21/0265 (2013.01); C30B 29/36 (2013.01); H01L 21/0243 (2013.01); H01L 21/02639 (2013.01); H01L 21/02447 (2013.01); H01L 21/02658 (2013.01); H01L 21/0262 (2013.01); H01L 29/1608 (2013.01);
Abstract
There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.