The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
May. 23, 2006
Takamitsu Kawahara, Kawasaki, JP;
Kuniaki Yagi, Ome, JP;
Naoki Hatta, Zama, JP;
Hiroyuki Nagasawa, Inagi, JP;
Takamitsu Kawahara, Kawasaki, JP;
Kuniaki Yagi, Ome, JP;
Naoki Hatta, Zama, JP;
Hiroyuki Nagasawa, Inagi, JP;
Hoya Corporation, Tokyo, JP;
Abstract
A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.