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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11264241 B1

PDFFull Text
Date of Patent:
Mar. 01, 2022

Filed:

Jul. 09, 2018

Semiconductor substrate, semiconductor element and method for producing semiconductor substrate

Applicants:

Tamura Corporation, Tokyo, JP;

Sicoxs Corporation, Tokyo, JP;

National Institute of Information and Communications Technology, Tokyo, JP;

Inventors:

Akito Kuramata, Sayama, JP;

Shinya Watanabe, Sayama, JP;

Kohei Sasaki, Sayama, JP;

Kuniaki Yagi, Tokyo, JP;

Naoki Hatta, Tokyo, JP;

Masataka Higashiwaki, Tokyo, JP;

Keita Konishi, Tokyo, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

SICOXS Corporation, Tokyo, JP;

National Institute of Information and Commnications Technology, Tokyo, JP;

Attorney:

Scully, Scott, Murphy & Presser, P.C.

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/02529 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 21/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/36 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor substrate includes a single crystal GaO-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal GaO-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal GaO-based substrate.

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