The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jul. 03, 2014
Kabushiki Kaisha Toyota Jidoshokki, Kariya-shi, Aichi, JP;
Sicoxs Corporation, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Ko Imaoka, Kariya, JP;
Motoki Kobayashi, Tokyo, JP;
Hidetsugu Uchida, Tokyo, JP;
Kuniaki Yagi, Tokyo, JP;
Takamitsu Kawahara, Tokyo, JP;
Naoki Hatta, Tokyo, JP;
Akiyuki Minami, Tokyo, JP;
Toyokazu Sakata, Tokyo, JP;
Tomoatsu Makino, Tokyo, JP;
Hideki Takagi, Tsukuba, JP;
Yuuichi Kurashima, Tsukuba, JP;
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, Aichi, JP;
SICOXS CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.