Company Filing History:

6 out of 40,739

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

4 out of 9,150

Industrial Technology Research Institute

patents

Years Active: 1998-2008

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7372102 - Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2008-05-13),

2. 7317221 - High density MIM capacitor structure and fabrication process (2008-01-08),

3. 7250344 - Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2007-07-31),

4. 7238969 - Semiconductor layout structure for ESD protection circuits (2007-07-03),

5. 7015086 - Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2006-03-21),

6. 6847061 - Elimination of implant damage during manufacture of HBT (2005-01-25),

7. 6352901 - Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regions (2002-03-05),

8. 6303419 - Method for fabricating a BiCMOS device featuring twin wells and an N type epitaxial layer (2001-10-16),

9. 5869380 - Method for forming a bipolar junction transistor (1999-02-09),

10. 5814547 - Forming different depth trenches simultaneously by microloading effect (1998-09-29),

Title: Kuan-Lun Chang: Innovator in Semiconductor Technology

Introduction

Kuan-Lun Chang, an accomplished inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 10 patents to his name, Chang has been at the forefront of innovation, developing structures and processes that enhance the capabilities of electronic devices.

Latest Patents

Among Chang's latest patents are groundbreaking advancements in semiconductor device isolation and manufacturing processes. One notable invention, "Structure having a shallow trench-deep trench isolation region for BiCMOS/CMOS technology," provides a novel approach to isolating regions within semiconductor devices. This innovation addresses the challenges faced in the integration of various technologies, ensuring improved performance and reliability.

Another significant patent, titled "High density MIM capacitor structure and fabrication process," outlines a method for creating a stacked integrated circuit (IC) MIM capacitor structure. This includes a first MIM capacitor structure formed within an intermetal dielectric (IMD) layer, and a second MIM capacitor structure arranged in a stacked configuration. The design promotes efficient electrical communication between the capacitor layers, optimizing the performance of integrated circuits.

Career Highlights

Kuan-Lun Chang has built a commendable career at leading organizations, notably Taiwan Semiconductor Manufacturing Company Limited (TSMC) and the Industrial Technology Research Institute (ITRI). His tenure at TSMC allowed him to contribute to one of the largest semiconductor manufacturers worldwide, providing him with invaluable industry insights and experience. At ITRI, he engaged in research and development, pushing the envelope in technological innovations.

Collaborations

Throughout his career, Chang has collaborated with notable peers, including Ruey-Hsin Liu and Chih-Min Chiang. Working alongside such talented colleagues has enabled Chang to enhance his inventions further and drive technological progress collectively.

Conclusion

Kuan-Lun Chang's passion and ingenuity in semiconductor technology have solidified his reputation as a leading inventor in the field. His 10 patents reflect his commitment to innovation and advancement. As he continues to develop cutting-edge technologies, the impact of his work on the electronics industry will undoubtedly be felt for years to come.

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