The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Apr. 03, 2003
Chun-lin Tsai, Hsin-Chu, TW;
Denny D. Tang, Saratoga, CA (US);
Chih-min Chiang, Hsin-Chu, TW;
Kuan-lun Chang, Hsin Chu, TW;
Tsyr Shyang, Hsin-Chu, TW;
Ruey-hsin Liu, Hsin-Chu, TW;
Chun-Lin Tsai, Hsin-Chu, TW;
Denny D. Tang, Saratoga, CA (US);
Chih-Min Chiang, Hsin-Chu, TW;
Kuan-Lun Chang, Hsin Chu, TW;
Tsyr Shyang, Hsin-Chu, TW;
Ruey-Hsin Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Hsinchu, TW;
Abstract
During the conventional manufacture of HBTs, implant damage occurs which leads to enhanced internal base diffusion. This problem has been overcome by making the base and base contact area from a single, uniformly doped layer of silicon-germanium. Instead of an ion implant step to selectively reduce the resistance of this layer away from the base, a layer of polysilicon is selectively deposited (using selective epi deposition) onto only that part. Additionally, the performance of the polysilicon emitter is enhanced by means a brief thermal anneal that drives a small amount of opposite doping type silicon into the SiGe base layer.