Company Filing History:

6 out of 27,375

Matsushita Electric Industrial Co., Ltd.

patents

1 out of 13

Matsushita Electric Ind. Co., Ltd.

patents

7 out of 832,891

Other

patents

Years Active: 2001-2005

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6876030 - Semiconductor memory device (2005-04-05),

2. 6831313 - Ferroelectric composite material, method of making same and memory utilizing same (2004-12-14),

3. 6787181 - Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth (2004-09-07),

4. 6713799 - Electrodes for ferroelectric components (2004-03-30),

5. 6706585 - Chemical vapor deposition process for fabricating layered superlattice materials (2004-03-16),

6. 6660536 - Method of making ferroelectric material utilizing anneal in an electrical field (2003-12-09),

7. 6607980 - Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same (2003-08-19),

8. 6605477 - Integrated circuit device including a layered superlattice material with an interface buffer layer (2003-08-12),

9. 6580632 - Semiconductor memory device, method for driving the same and method for fabricating the same (2003-06-17),

10. 6562678 - Chemical vapor deposition process for fabricating layered superlattice materials (2003-05-13),

11. 6489645 - Integrated circuit device including a layered superlattice material with an interface buffer layer (2002-12-03),

12. 6396095 - Semiconductor memory and method of driving semiconductor memory (2002-05-28),

13. 6351004 - Tunneling transistor applicable to nonvolatile memory (2002-02-26),

14. 6326315 - Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same (2001-12-04),

Title: Kiyoshi Uchiyama: Innovator in Semiconductor Technology

Introduction

Kiyoshi Uchiyama is a prominent inventor based in Colorado Springs, CO (US), known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Uchiyama has made remarkable advancements in the field of memory devices.

Latest Patents

Among his latest patents is a semiconductor memory device that features a field-effect transistor with a gate electrode formed over a semiconductor substrate, incorporating a ferroelectric layer. This innovative design includes a first insulating layer that effectively prevents leakage current more than the ferroelectric layer. Another notable patent is for a ferroelectric memory that consists of multiple memory cells, each containing a ferroelectric thin film made from a microscopically composite material. This material includes a ferroelectric component and a dielectric component, which is a different chemical compound. The dielectric component is designed to be a fluxor, allowing the ferroelectric thin film to crystallize at elevated temperatures.

Career Highlights

Uchiyama has worked with notable companies, including Matsushita Electric Industrial Co., Ltd., where he honed his skills and contributed to groundbreaking technologies. His work has had a lasting impact on the semiconductor industry, particularly in the development of memory devices.

Collaborations

Throughout his career, Kiyoshi Uchiyama has collaborated with esteemed colleagues such as Carlos Alberto Paz De Araujo and Narayan Solayappan. These partnerships have fostered innovation and have been instrumental in advancing semiconductor technology.

Conclusion

Kiyoshi Uchiyama's contributions to the field of semiconductor technology are significant and continue to influence the industry. His innovative patents and collaborations highlight his role as a leading inventor in this vital area of technology.

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