The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Jul. 22, 2003
Kiyoshi Uchiyama, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Vikram Joshi, Colorado Springs, CO (US);
Narayan Solayappan, Colorado Springs, CO (US);
Jolanta Celinska, Colorado Springs, CO (US);
Larry D. McMillan, Colorado Springs, CO (US);
Other;
Abstract
A ferroelectric memory ( ) includes a plurality of memory cells ( ) each containing a ferroelectric thin film ( ) including a microscopically composite material having a ferroelectric component ( ) and a dielectric component ( ), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.