The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Sep. 20, 2001
Applicants:
Kiyoshi Uchiyama, Colorado Springs, CO (US);
Yasuhiro Shimada, Kyoto, JP;
Koji Arita, Osaka, JP;
Tatsuo Otsuki, Osaka, JP;
Inventors:
Kiyoshi Uchiyama, Colorado Springs, CO (US);
Yasuhiro Shimada, Kyoto, JP;
Koji Arita, Osaka, JP;
Tatsuo Otsuki, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.