The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Apr. 02, 2003
Kiyoshi Uchiyama, Colorado Springs, CO (US);
Narayan Solayappan, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Other;
Abstract
A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first precursor compounds, and the first precursor compound or compounds decompose in the CVD reaction chamber to deposit a coating containing metal atoms on the heated integrated circuit substrate. The coating is treated by RTP. Thereafter, a second reactant gas is flowed into a CVD reaction chamber containing the heated substrate. The second reactant gas contains a second precursor compound or a plurality of second precursor compounds, which decompose in the CVD reaction chamber to deposit more metal atoms on the substrate. Heat for reaction and crystallization of the deposited metal atoms to form a thin film of layered superlattice material is provided by heating the substrate during CVD deposition, as well as by selected rapid thermal processing (“RTP”) and furnace annealing steps.