The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jun. 29, 2001
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
Source/drain regions for a field effect transistor are defined in a semiconductor substrate with a channel region interposed therebetween. A first gate electrode is formed over the semiconductor substrate with an insulating film sandwiched therebetween and has a gate length shorter than the length of the channel region. A ferroelectric film is formed to cover the first gate electrode and to have both side portions thereof make contact with the insulating film. A second gate electrode is formed to cover the ferroelectric film.
Shimada, Yasuhiro. (2002). Semiconductor memory and method of driving semiconductor memory (U.S. Patent No. 6396095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6396095
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile