The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2003

Filed:

Feb. 21, 2002
Applicant:
Inventors:

Kiyoshi Uchiyama, Colorado Springs, CO (US);

Carlos A. Paz de Araujo, Colorado Springs, CO (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18238 ; H01L 2/18242 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18238 ; H01L 2/18242 ; H01L 2/131 ;
Abstract

A ferroelectric thin film precursor material is annealed while in an electric field. The electric field is maintained as the material cools. A partially completed integrated circuit with a ferroelectric thin film precursor material may be placed between two electrodes in an annealing apparatus and voltage sufficient to polarize the ferroelectric thin film material in the direction of the electrical field is supplied to the electrodes during the anneal and as the film cools. Alternatively, probes are connected to the electrodes of a partially completed integrated circuit device and voltage sufficient to polarize the ferroelectric material is applied while annealing the material and as it cools. The anneal may be a furnace anneal or an RTP anneal.


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