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For the Inventor, By the Inventor

Amherst, NH, United States of America

Kiuchul Hwang

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 1.8

ph-index = 4

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal11 out of 8,175 
 
Raytheon Company
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 2007-2023

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12 patents (USPTO):Explore Patents
1. 11594627 - Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors (2023-02-28),
2. 11362190 - Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers (2022-06-14),
3. 11127596 - Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation (2021-09-21),
4. 11101378 - Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors (2021-08-24),
5. 10797129 - Field effect transistor structure having notched mesa (2020-10-06),
6. 10541148 - Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductor (2020-01-21),
7. 10134839 - Field effect transistor structure having notched mesa (2018-11-20),
8. 9887089 - Semiconductor structures having T-shaped electrodes (2018-02-06),
9. 7626218 - Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors (2009-12-01),
10. 7498223 - Semiconductor devices having improved field plates (2009-03-03),
11. 7361536 - Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor (2008-04-22),
12. 7183592 - Field effect transistor (2007-02-27),

Title: Kiuchul Hwang: Innovator in Semiconductor Technology

Introduction

Kiuchul Hwang is a prominent inventor based in Amherst, NH (US), known for his significant contributions to semiconductor technology. He holds a total of 12 patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

Hwang's latest patents include groundbreaking advancements in high electron mobility transistors (HEMTs). One notable patent describes a semiconductor structure that incorporates both enhancement mode and depletion mode group III-N HEMTs. This invention features an enhancement-mode HEMT with a gate electrode that includes a doped Group III-N material, which enhances the resistivity of the material to effectively deplete the 2D electron gas (2DEG) under the gate at zero bias. Another significant patent involves a depletion mode HEMT semiconductor device that utilizes beryllium doped Schottky contact layers, creating a heterojunction with a 2DEG channel.

Career Highlights

Throughout his career, Kiuchul Hwang has worked with notable companies, including Raytheon Company. His work has significantly impacted the development of advanced semiconductor devices, contributing to the evolution of high-performance electronics.

Collaborations

Hwang has collaborated with esteemed colleagues such as Brian D. Schultz and John Logan, further enhancing his innovative projects and research endeavors.

Conclusion

Kiuchul Hwang's contributions to semiconductor technology and his impressive portfolio of patents underscore his role as a leading inventor in the field. His work continues to influence advancements in electronics and semiconductor devices.

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