The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Aug. 02, 2017
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Kiuchul Hwang, Amherst, NH (US);
Brian D. Schultz, Lexington, MA (US);
Amanda Kerr, Chelmsford, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/36 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2654 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract
A method includes providing a single crystal substrate having a buffer layer on a surface of the substrate. The buffer layer provides a transition between the crystallographic lattice structure of the substrate and the crystallographic lattice structure of the semiconductor layer and has its resistivity increased by ion implanting a dopant into the buffer layer; and forming semiconductor layer on the ion implanted buffer layer. The semiconductor layer may be a wide bandgap semiconductor layer having a high electron mobility transistors formed therein.