Company Filing History:
Years Active: 2020-2021
Title: Amanda Kerr: Innovator in Semiconductor Technology
Introduction
Amanda Kerr is a prominent inventor based in Chelmsford, MA (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative approach to material growth and structure.
Latest Patents
Her latest patents include a method for semiconductor material growth of a high resistivity nitride buffer layer using ion implantation. This method involves providing a single crystal substrate with a buffer layer that transitions between the crystallographic lattice structures of the substrate and the semiconductor layer. The resistivity of the buffer layer is increased by ion implanting a dopant, followed by the formation of a semiconductor layer that may include high electron mobility transistors. Another notable patent is for a Group III-nitride structure that features successively reduced crystallographic dislocation density regions. This structure comprises a nucleation layer and a Group III-Nitride structure with pairs of stacked layers, each exhibiting distinct growth structures and surface roughness characteristics.
Career Highlights
Amanda currently works at Raytheon Company, where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of electronic devices and systems.
Collaborations
Some of her notable coworkers include Brian D Schultz and Kiuchul Hwang, with whom she collaborates on various projects within the semiconductor field.
Conclusion
Amanda Kerr is a trailblazer in semiconductor innovation, with her patents reflecting her commitment to advancing technology. Her contributions continue to shape the future of electronic materials and devices.