The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
May. 22, 2020
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Kiuchul Hwang, Amherst, NH (US);
Brian D. Schultz, Lexington, MA (US);
John Logan, Lawrence, MA (US);
Robert E. Leoni, Somerville, MA (US);
Nicholas J. Kolias, Winchester, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/475 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01);
Abstract
A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.