The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Feb. 04, 2005
Applicants:
Kiuchul Hwang, Amherst, NH (US);
Michael G Adlerstein, Wellesley, MA (US);
Inventors:
Kiuchul Hwang, Amherst, NH (US);
Michael G Adlerstein, Wellesley, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/201 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.
Hwang, Kiuchul. (2009). Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and rf/rf/microwave/milli-meter wave milli-meter wave field effect transistors (U.S. Patent No. 7626218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7626218
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile