The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Oct. 05, 2016
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Kiuchul Hwang, Amherst, NH (US);
Dale M. Shaw, Groton, MA (US);
Adrian D. Williams, Methuen, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 51/00 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28114 (2013.01); H01L 21/283 (2013.01); H01L 21/28587 (2013.01); H01L 29/42316 (2013.01);
Abstract
A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.