The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Dec. 14, 2018
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Kezia Cheng, Lowell, MA (US);
Kamal Tabatabaie Alavi, Sharon, MA (US);
Adrian D. Williams, Methuen, MA (US);
Christopher J. MacDonald, Medford, MA (US);
Kiuchul Hwang, Amherst, NH (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/321 (2006.01); H01L 29/45 (2006.01); H01L 21/3205 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/321 (2013.01); H01L 21/28575 (2013.01); H01L 21/32051 (2013.01); H01L 29/452 (2013.01);
Abstract
A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.