The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Jul. 20, 2021
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Kiuchul Hwang, Amherst, NH (US);
Brian D. Schultz, Lexington, MA (US);
John Logan, Lawrence, MA (US);
Christos Thomidis, Watertown, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/223 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/2233 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/66431 (2013.01);
Abstract
An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.