Watertown, MA, United States of America

Christos Thomidis


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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2 patents (USPTO):Explore Patents

Title: Christos Thomidis: Innovator in Semiconductor Technology

Introduction

Christos Thomidis is a notable inventor based in Watertown, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). With a total of 2 patents to his name, Thomidis continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

Thomidis's latest patents focus on semiconductor structures that incorporate both enhancement mode and depletion mode group III-N high electron mobility transistors. One of his key inventions is an Enhancement-Mode HEMT that features a gate electrode with a doped, Group III-N material. This innovative design increases the resistivity of the Group III-N material, effectively depleting the two-dimensional electron gas (2DEG) under the gate at zero bias. This advancement has the potential to enhance the performance and efficiency of semiconductor devices.

Career Highlights

Christos Thomidis is currently employed at Raytheon Company, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of electronic components used in various applications. His contributions have not only benefited his company but have also had a broader impact on the industry.

Collaborations

Thomidis has collaborated with several talented individuals in his field, including Kiuchul Hwang and Brian D Schultz. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

In summary, Christos Thomidis is a prominent inventor whose work in semiconductor technology has led to significant advancements in high electron mobility transistors. His patents reflect a commitment to innovation and excellence in the field.

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