Taichung, Taiwan

Ker Hsiao Huo


Average Co-Inventor Count = 5.8

ph-index = 5

Forward Citations = 61(Granted Patents)


Location History:

  • Taichung, TW (2013 - 2017)
  • Zhubei, TW (2018 - 2022)

Company Filing History:


Years Active: 2013-2022

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23 patents (USPTO):Explore Patents

Title: The Innovative Mind of Ker Hsiao Huo

Introduction

Ker Hsiao Huo is a prominent inventor based in Taichung, Taiwan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 23 patents, Huo continues to push the boundaries of innovation in integrated circuits and high voltage applications.

Latest Patents

His latest patents showcase his expertise and innovative thinking. The first, titled "Series resistor over drain region in high voltage device," involves an integrated circuit that features a ring-shaped drain region surrounding a channel region that is separated from a source region. The design includes a gate electrode over the channel region and a resistor structure that is spatially separated from the substrate, effectively enhancing the performance of high voltage devices.

Another notable patent, "Embedded JFETs for high voltage applications," describes a sophisticated device consisting of a buried well region and a first HVW region, alongside multiple well regions that contribute to the formation of a Junction FET (JFET). This invention highlights Huo's commitment to advancing technology in high voltage scenarios, presenting a robust design that integrates various conductivity types for improved functionality.

Career Highlights

Throughout his career at Taiwan Semiconductor Manufacturing Company Ltd., Ker Hsiao Huo has established himself as a key contributor to several cutting-edge projects. His work has not only led to innovative patents but also solidified his reputation as an expert in semiconductor research and development.

Collaborations

Huo often collaborates with esteemed colleagues such as Fu-Chih Yang and Ru-Yi Su, working together to explore new frontiers in technology and push the limits of what is possible within their field. Their collaborative efforts reflect a shared vision of innovation and excellence in semiconductor technology.

Conclusion

In summary, Ker Hsiao Huo stands out as an influential inventor whose patents are shaping the future of high voltage applications and integrated circuits. His work at Taiwan Semiconductor Manufacturing Company Ltd. and collaborations with notable colleagues underscore his dedication to advancing the field of semiconductor technology, making him an inspiring figure in contemporary innovation.

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