The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Mar. 13, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ker Hsiao Huo, Zhubei, TW;
Fu-Chih Yang, Fengshan, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Yi-Min Chen, Hsinchu, TW;
Chih-Yuan Chan, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Some embodiments relate to a semiconductor device. The semiconductor device includes a drain region and a channel region surrounding the drain region. A source region surrounds the channel region such that the channel region separates the drain region from the source region. A gate electrode is arranged over the channel region and has an inner edge proximate to the drain. A resistor structure, which is made up of a curved or polygonal path of resistive material, is arranged over the drain and is coupled to the drain. The resistor structure is perimeterally bounded by the inner edge of the gate electrode.