The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Oct. 11, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ker Hsiao Huo, Taichung, TW;
Chih-Chang Cheng, Hsinchu, TW;
Ru-Yi Su, Kouhu Township, TW;
Jen-Hao Yeh, Kaohsiung, TW;
Fu-Chih Yang, Fengshan, TW;
Chun Lin Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS), particularly an insulated gate bipolar junction transistor (IGBT), and a method of making it are provided in this disclosure. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. The gate, source, second doped well, a portion of the first well, and a portion of the drain structure are surrounded by a deep trench isolation feature and an implanted oxygen layer in the silicon substrate.