The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Nov. 08, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ru-Yi Su, Kouhu Township, TW;
Fu-Chih Yang, Fengshan, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Ker Hsiao Huo, Taichung, TW;
Chih-Chang Cheng, Hsinchu, TW;
Ruey-Hsin Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate; a doped extension region formed in the drift region and having a second doping polarity opposite the first doping polarity, the doped extension region including a laterally-extending component; a dielectric structure formed over the drift region, the dielectric structure being separated from the doped extension region by a portion of the drift region; a gate structure formed over a portion of the dielectric structure and a portion of the doped extension region; and a doped isolation region having the second doping polarity, the doped isolation region at least partially surrounding the drift region and the doped extension region.