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For the Inventor, By the Inventor

McKinney, TX, United States of America

Kenneth Joseph Newton

This inventor holds 9 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2002-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenneth Joseph Newton. Retrieved from https://idiyas.com/inventor/kenneth-joseph-newton

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 103(Granted Patents)


Company Filing History:

goldMedal9 out of 29,888 
 
Texas Instruments Corporation
 patents

Years Active: 2002-2010

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9 patents (USPTO):Explore Patents
1. 7727885 - Reduction of punch-thru defects in damascene processing (2010-06-01),
2. 7087518 - Method of passivating and/or removing contaminants on a low-k dielectric/copper surface (2006-08-08),
3. 6872665 - Process flow for dual damescene interconnect structures (2005-03-29),
4. 6861348 - Pre-pattern surface modification of low-k dielectrics (2005-03-01),
5. 6797633 - In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning (2004-09-28),
6. 6774031 - Method of forming dual-damascene structure (2004-08-10),
7. 6723636 - Methods for forming multiple damascene layers (2004-04-20),
8. 6720247 - Pre-pattern surface modification for low-k dielectrics using A H2 plasma (2004-04-13),
9. 6455411 - Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics (2002-09-24),

Title: Innovations of Kenneth Joseph Newton

Introduction

Kenneth Joseph Newton is a notable inventor based in McKinney, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on improving the fabrication processes of semiconductor devices, particularly in mitigating defects.

Latest Patents

One of his latest patents is titled "Reduction of punch-thru defects in damascene processing." This invention addresses the challenge of conductive void formation in metallization layers during semiconductor device fabrication. The process involves forming a substrate and a first dielectric layer, followed by creating a conductive trench. An etch stop layer is then applied, and a second dielectric layer is formed over it. The invention includes a clean process that reduces surface charge on exposed portions of the etch stop layer, ultimately enhancing the reliability of the device.

Another significant patent is the "Method of passivating and/or removing contaminants on a low-k dielectric/copper surface." This method focuses on removing contaminants from a low-k film by forming a sacrificial layer over the contaminated surface. The contaminants bond with the sacrificial layer, which is then etched away, effectively cleaning the surface. This innovative approach helps prevent pattern defects in chemically amplified photoresists formed over low-k films.

Career Highlights

Kenneth Newton is currently employed at Texas Instruments Corporation, where he continues to develop cutting-edge technologies in semiconductor processing. His expertise and innovative mindset have made him a valuable asset to the company.

Collaborations

Throughout his career, Kenneth has collaborated with talented individuals such as Andrew McKerrow and Robert Kraft. These partnerships have contributed to the advancement of his inventions and the overall progress in the semiconductor industry.

Conclusion

Kenneth Joseph Newton's contributions to semiconductor technology through his patents and innovative methods have significantly impacted the industry. His work continues to pave the way for advancements in device fabrication and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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