The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Sep. 28, 2001
Applicant:
Inventors:
Ping Jiang, Plano, TX (US);
Robert Kraft, Plano, TX (US);
Kenneth J. Newton, McKinney, TX (US);
Daty M. Rogers, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
After via etch, a low-k dielectric layer ( ) is treated with an in-situ O plasma. Resist poisoning is caused by a N source that causes an interaction between low-k films ( ), such as OSG, and DUV resist ( ). The in-situ plasma treatment immediately removes the source of poisoning to reduce or eliminate poisoning at trench patterning.