The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
May. 15, 2003
David Gerald Farber, Wylie, TX (US);
William Wesley Dostalik, Plano, TX (US);
Robert Kraft, Plano, TX (US);
Andrew J. Mckerrow, Dallas, TX (US);
Kenneth Joseph Newton, Mckinney, TX (US);
Ting Tsui, Dallas, TX (US);
David Gerald Farber, Wylie, TX (US);
William Wesley Dostalik, Plano, TX (US);
Robert Kraft, Plano, TX (US);
Andrew J. McKerrow, Dallas, TX (US);
Kenneth Joseph Newton, Mckinney, TX (US);
Ting Tsui, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.