The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Ping Jiang, Plano, TX (US);
Francis G. Celii, Dallas, TX (US);
Kenneth J. Newton, McKinney, TX (US);
Hiromi Sakima, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1308 ;
U.S. Cl.
CPC ...
H01L 2/1308 ;
Abstract
A dual damascene process for low-k or ultra low-k dielectric such as organo-silicate glass (OSG). After the via ( ) etch, a trench ( ) is etched in the OSG layer ( ) using a less-polymerizing fluorocarbon added to an etch chemistry comprising a fluorocarbon and low N /Ar ratio. The low N /Ar ratio controls ridge formation during the trench etch. The combination of a less-polymerizing fluorocarbon with a higher-polymerizing fluorocarbon achieves a high etch rate and defect-free conditions.