For the Inventor, By the Inventor

Enter inventor name

Keng-Yung Lin

USPTO Granted Patents = 7

Average Co-Inventor Count = 6.1

ph-index = 1

Forward Citations = 4(Granted Patents)

Location History:

Hsin-Chu, TW (2019 - 2021)
Tainan, TW (2020 - 2023)

Company Filing History:

7 out of 40,739

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

where one patent can have more than one assignee

Years Active: 2019-2023

Loading Chart...

7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11615955 - Material having single crystal perovskite, device including the same, and manufacturing method thereof (2023-03-28),

2. 11201055 - Semiconductor device having high-κ dielectric layer and method for manufacturing the same (2021-12-14),

3. 11114301 - Semiconductor device and manufacturing method thereof (2021-09-07),

4. 11081339 - Single-crystal rare earth oxide grown on III-V compound (2021-08-03),

5. 10755924 - Material having single crystal perovskite, device including the same, and manufacturing method thereof (2020-08-25),

6. 10748774 - Semiconductor device and manufacturing method thereof (2020-08-18),

7. 10283349 - Single-crystal rare earth oxide grown on III-V compound (2019-05-07),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…