The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Nov. 14, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ming-Hwei Hong, Hsinchu County, TW;
Juei-Nai Kwo, Hsinchu County, TW;
Yen-Hsun Lin, Changhua County, TW;
Keng-Yung Lin, Tainan, TW;
Bo-Yu Yang, New Taipei, TW;
Hsien-Wen Wan, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.