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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11081339 B1

PDFFull Text
Date of Patent:
Aug. 03, 2021

Filed:

Apr. 24, 2019

Single-crystal rare earth oxide grown on iii-v compound

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuanhsiung Chen, Hsin-Chu, TW;

Minghwei Hong, Hsin-Chu, TW;

Jueinai Kwo, Hsin-Chu, TW;

Yen-Hsun Lin, Hsin-Chu, TW;

Keng-Yung Lin, Hsin-Chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02192 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/02433 (2013.01); H01L 21/02455 (2013.01); H01L 21/02516 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/28264 (2013.01); H01L 29/045 (2013.01); H01L 29/20 (2013.01); H01L 29/517 (2013.01); H01L 29/66522 (2013.01); H01L 29/66568 (2013.01); H01L 29/513 (2013.01);
Abstract

A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (YO) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

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