The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Aug. 03, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ming-Hwei Hong, Hsinchu County, TW;
Juei-Nai Kwo, Hsinchu County, TW;
Yen-Hsun Lin, Changhua County, TW;
Keng-Yung Lin, Tainan, TW;
Bo-Yu Yang, New Taipei, TW;
Hsien-Wen Wan, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, and source/drain regions. The gate structure comprises an yttrium oxide layer over the semiconductor substrate, an aluminum oxide layer over the yttrium oxide layer, and a gate electrode on the aluminum oxide layer. The source/drain regions are on the semiconductor substrate and on opposite sides of the gate structure.