The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Aug. 24, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Bo-Yu Yang, New Taipei, TW;
Minghwei Hong, Zhubei, TW;
Jueinai Kwo, Hsinchu, TW;
Yen-Hsun Lin, Changhua, TW;
Keng-Yung Lin, Tainan, TW;
Hsien-Wen Wan, Kaohsiung, TW;
Chao Kai Cheng, New Taipei, TW;
Kuan Chieh Lu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.