The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Sep. 15, 2017
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Chien-Hua Fu, Kaohsiung, TW;
Keng-Yung Lin, Tainan, TW;
Yen-Hsun Lin, Changhua, TW;
Kuanhsiung Chen, Pitou Township, Changhua County, TW;
Juei-Nai Kwo, Zhubei, TW;
Minghwei Hong, Zhubei, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 27/06 (2006.01); H01L 21/324 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02387 (2013.01); H01L 21/0228 (2013.01); H01L 21/02192 (2013.01); H01L 21/02266 (2013.01); H01L 21/02318 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 21/28264 (2013.01); H01L 27/0629 (2013.01); H01L 29/20 (2013.01); H01L 29/66522 (2013.01); H01L 29/78 (2013.01); H01L 21/324 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-κ dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.