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For the Inventor, By the Inventor

Tainan, Taiwan

Keng-Ying Liao

USPTO Granted Patents = 46 

Average Co-Inventor Count = 5.9

ph-index = 4

Forward Citations = 74(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Tainan, TW (2015 - 2024)

Company Filing History:

goldMedal46 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Flash Memory Device
Image Sensor Device
Semiconductor Device
Polysilicon Removal
CMOS Sensors
Wafer Treatment
Buried Floating Gate
Backside Alignment Mark
Two Dimensional Structure
Image Sensor Grid
Memory Device Manufacturing
Semiconductor Isolation Structure
46 patents (USPTO):Explore Patents
1. 12402362 - Flash memory device with three-dimensional half structure and methods for forming the same (2025-08-26),
2. 12376297 - Polysilicon removal in word line contact region of memory devices (2025-07-29),
3. 12364049 - Semiconductor device (2025-07-15),
4. 12317545 - Memory device and manufacturing method thereof (2025-05-27),
5. 12261188 - Image sensor device and methods of forming the same (2025-03-25),
6. 12218253 - Flash memory device with three dimensional half flash structure and methods for forming the same (2025-02-04),
7. 12199159 - Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same (2025-01-14),
8. 12191338 - Image sensor device and methods of forming the same (2025-01-07),
9. 12183550 - Wafer treatment system and method of treating wafer (2024-12-31),
10. 12094997 - BSI chip with backside alignment mark (2024-09-17),
11. 12041771 - Polysilicon removal in word line contact region of memory devices (2024-07-16),
12. 11903193 - Two dimensional structure to control flash operation and methods for forming the same (2024-02-13),
13. 11901390 - Semiconductor device (2024-02-13),
14. 11888074 - Flash memory device with three-dimensional half flash structure and methods for forming the same (2024-01-30),
15. 11804529 - Memory device and manufacturing method thereof (2023-10-31),

Title: The Innovative Journey of Inventor Keng-Ying Liao

Introduction:

Keng-Ying Liao, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Keng-Ying Liao's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights:

Throughout his illustrious career, Keng-Ying Liao has been recognized for his pioneering work in the areas of clean energy, sustainable development, and smart technologies. His inventions have not only revolutionized the industry but have also had a positive impact on the environment.

Collaborations:

Keng-Ying Liao has collaborated with leading research institutions, universities, and companies worldwide to further his research and bring his inventions to life. His collaborative efforts have led to the successful implementation of innovative solutions in various sectors.

Conclusion:

Inventor Keng-Ying Liao's passion for innovation and commitment to creating a more sustainable future have solidified his position as a trailblazer in the world of technology. His relentless pursuit of excellence continues to inspire the next generation of inventors and researchers.

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