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For the Inventor, By the Inventor

Milpitas, CA, United States of America

Ken Kaung Lai

This inventor holds 23 USPTO granted patents, primarily in Atomic Layer Deposition. Top assignee: Applied Materials, Inc.. Active years: 2001-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ken Kaung Lai. Retrieved from https://idiyas.com/inventor/ken-kaung-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 52.2

Average Co-Inventor Count = 7.8

ph-index = 14

Forward Citations = 1,349(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2001)
  • Milpitas, CA (US) (2002 - 2014)
  • San Jose, CA (US) (2015 - 2018)

Company Filing History:

goldMedal23 out of 14,454 
 
Applied Materials, Inc.
 patents

Years Active: 2001-2018

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Areas of Expertise:
Atomic Layer Deposition
Tungsten Deposition
Nitridation Process
Vapor Deposition
Pulsed Nucleation
Composite Tungsten Films
Refractory Metal Layers
Showerhead Design
Edge Deposition Control
Thin Film Technology
Deposition Techniques
Semiconductor Manufacturing
23 patents (USPTO):Explore Patents
1. 10049881 - Method and apparatus for selective nitridation process (2018-08-14),
2. 9031685 - Atomic layer deposition apparatus (2015-05-12),
3. 8626330 - Atomic layer deposition apparatus (2014-01-07),
4. 8027746 - Atomic layer deposition apparatus (2011-09-27),
5. 7860597 - Atomic layer deposition apparatus (2010-12-28),
6. 7745333 - Methods for depositing tungsten layers employing atomic layer deposition techniques (2010-06-29),
7. 7709385 - Method for depositing tungsten-containing layers by vapor deposition techniques (2010-05-04),
8. 7695563 - Pulsed deposition process for tungsten nucleation (2010-04-13),
9. 7660644 - Atomic layer deposition apparatus (2010-02-09),
10. 7605083 - Formation of composite tungsten films (2009-10-20),
11. 7465665 - Method for depositing tungsten-containing layers by vapor deposition techniques (2008-12-16),
12. 7405158 - Methods for depositing tungsten layers employing atomic layer deposition techniques (2008-07-29),
13. 7384867 - Formation of composite tungsten films (2008-06-10),
14. 7220673 - Method for depositing tungsten-containing layers by vapor deposition techniques (2007-05-22),
15. 7211144 - Pulsed nucleation deposition of tungsten layers (2007-05-01),

Title: Innovator Spotlight: Ken Kaung Lai - Pioneering Inventor in Milpitas, CA

Introduction:

Ken Kaung Lai is a distinguished inventor based in Milpitas, CA, who has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 23 patents, Ken Kaung Lai continues to drive innovation and advancements in the industry.

Latest Patents:

Ken Kaung Lai's latest patents showcase his expertise in developing cutting-edge technologies. One of his recent patents includes the "Method and Apparatus for Selective Nitridation Process," which introduces improved methods for nitridation of material stacks in semiconductor devices. Another notable patent is the "Atomic Layer Deposition Apparatus," which describes a novel method for atomic layer deposition with enhanced precision and control.

Career Highlights:

Ken Kaung Lai is a key figure at Applied Materials, Inc., a prominent player in the semiconductor equipment industry. His innovative ideas and technical prowess have helped the company stay at the forefront of technological advancements. With a keen eye for detail and a passion for pushing boundaries, Ken Kaung Lai continues to make significant contributions to the field.

Collaborations:

In his professional journey, Ken Kaung Lai has collaborated with industry experts such as Ming Xi and Alfred W Mak. These collaborations have led to the development of groundbreaking technologies and have fostered a culture of innovation within the semiconductor community.

Conclusion:

Ken Kaung Lai's remarkable journey as an inventor is a testament to his dedication, ingenuity, and relentless pursuit of excellence in semiconductor technology. His contributions have not only shaped the industry but have also inspired a new generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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