The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2010

Filed:

Jun. 12, 2006
Applicants:

Barry L. Chin, Saratoga, CA (US);

Alfred W. Mak, Union City, CA (US);

Lawrence Chung-lai Lei, Milpitas, CA (US);

Ming Xi, Palo Alto, CA (US);

Hua Chung, San Jose, CA (US);

Ken Kaung Lai, Milpitas, CA (US);

Jeong Soo Byun, Cupertino, CA (US);

Inventors:

Barry L. Chin, Saratoga, CA (US);

Alfred W. Mak, Union City, CA (US);

Lawrence Chung-Lai Lei, Milpitas, CA (US);

Ming Xi, Palo Alto, CA (US);

Hua Chung, San Jose, CA (US);

Ken Kaung Lai, Milpitas, CA (US);

Jeong Soo Byun, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.


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