Jeong Soo Byun

Title: Innovations and Contributions of Jeong Soo Byun in Nonvolatile Charge Trap Memory Devices

Introduction

Jeong Soo Byun is an accomplished inventor based in Cupertino, CA, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 49 patents, Byun has been at the forefront of innovations that enhance the functionality of nonvolatile memory devices.

Latest Patents

Among Byun’s latest patents are innovative methods for fabricating nonvolatile charge trap memory devices. One notable method involves a radical oxidation process where a substrate undergoes a first oxidation procedure to create a tunnel oxide layer over a polysilicon channel. Following this, a multi-layer charge storing layer is formed, consisting of an oxygen-rich first layer and an oxygen-lean second layer, both comprising nitrides. The second oxidation process is crucial, utilizing either a plasma oxidation technique or a radical oxidation process that employs In-Situ Steam Generation to optimize performance. Another patent details a memory transistor design, where a multi-layer charge storage layer is strategically employed beneath a blocking structure created by plasma oxidation. This configuration results in a unique charge storage capability, optimizing memory functionality and efficiency.

Career Highlights

Jeong Soo Byun has made significant strides throughout his career, having worked with leading companies in the semiconductor industry such as Applied Materials, Inc. and Cypress Semiconductor Corporation. His work has not only pushed the boundaries of memory device technology but has also led to practical applications in various consumer electronics.

Collaborations

Throughout his career, Byun has collaborated with talented individuals in the field, including Alfred W Mak and Hua Chung. These partnerships have facilitated the exchange of ideas and fostered innovations that contribute significantly to advancements in semiconductor technology.

Conclusion

With a strong background and numerous patents to his name, Jeong Soo Byun continues to be a pivotal figure in the evolution of memory technology. His innovative approaches and collaborative spirit reflect his dedication to enhancing the efficiency and reliability of nonvolatile charge trap memory devices. Byun’s work not only propels his career forward but also significantly contributes to the broader field of semiconductor technology.