The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Sep. 14, 2012
Krishnaswamy Ramkumar, San Jose, CA (US);
Jeong Byun, Cupertino, CA (US);
Sagy Levy, Zichron, IL (US);
Krishnaswamy Ramkumar, San Jose, CA (US);
Jeong Byun, Cupertino, CA (US);
Sagy Levy, Zichron, IL (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A method for fabricating a nonvolatile charge trap memory device and the device are described. In one embodiment, the method includes providing a substrate in an oxidation chamber, wherein the substrate comprises a first exposed crystal plane and a second exposed crystal plane, and wherein the crystal orientation of the first exposed crystal plane is different from the crystal orientation of the second exposed crystal plane. The substrate is then subjected to a radical oxidation process to form a first portion of a dielectric layer on the first exposed crystal plane and a second portion of the dielectric layer on the second exposed crystal plane, wherein the thickness of the first portion of the dielectric layer is approximately equal to the thickness of the second portion of the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile