The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 19, 2011
Barry L. Chin, Saratoga, CA (US);
Alfred W. Mak, Union City, CA (US);
Lawrence Chung-lai Lei, Milpitas, CA (US);
Ming Xi, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Alfred W. Mak, Union City, CA (US);
Lawrence Chung-Lai Lei, Milpitas, CA (US);
Ming Xi, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.