The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2008

Filed:

Aug. 18, 2005
Applicants:

Ken K. Lai, Milpitas, CA (US);

Jeong Soo Byun, Cupertino, CA (US);

Frederick C. Wu, Cupertino, CA (US);

Ramanujapuran A. Srinivas, San Jose, CA (US);

Avgerinos Gelatos, Redwood City, CA (US);

Mei Chang, Saratoga, CA (US);

Moris Kori, Palo Alto, CA (US);

Ashok K. Sinha, Palo Alto, CA (US);

Hua Chung, San Jose, CA (US);

Hongbin Fang, Mountain View, CA (US);

Alfred W. Mak, Union City, CA (US);

Michael X. Yang, Fremont, CA (US);

Ming Xi, Palo Alto, CA (US);

Inventors:

Ken K. Lai, Milpitas, CA (US);

Jeong Soo Byun, Cupertino, CA (US);

Frederick C. Wu, Cupertino, CA (US);

Ramanujapuran A. Srinivas, San Jose, CA (US);

Avgerinos Gelatos, Redwood City, CA (US);

Mei Chang, Saratoga, CA (US);

Moris Kori, Palo Alto, CA (US);

Ashok K. Sinha, Palo Alto, CA (US);

Hua Chung, San Jose, CA (US);

Hongbin Fang, Mountain View, CA (US);

Alfred W. Mak, Union City, CA (US);

Michael X. Yang, Fremont, CA (US);

Ming Xi, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.


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