The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Jan. 08, 2007
Xinliang LU, Sunnyvale, CA (US);
Ping Jian, San Jose, CA (US);
Jong Hyun Yoo, Milpitas, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Alfred W. Mak, Union City, CA (US);
Robert L. Jackson, San Jose, CA (US);
Ming Xi, Milpitas, CA (US);
Xinliang Lu, Sunnyvale, CA (US);
Ping Jian, San Jose, CA (US);
Jong Hyun Yoo, Milpitas, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Alfred W. Mak, Union City, CA (US);
Robert L. Jackson, San Jose, CA (US);
Ming Xi, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.