The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
May. 15, 2007
Ming Xi, Milpitas, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Xinliang LU, Sunnyvale, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Karl A. Littau, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Xinliang Lu, Sunnyvale, CA (US);
Ken Kaung Lai, Milpitas, CA (US);
Karl A. Littau, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.